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|Freescale announces RF power LDMOS transistors that cover full frequency bands for wireless base stations|
High efficiency and wide instantaneous bandwidth allow network operators to reduce operating and capital expenditures and improve network flexibility
AUSTIN, Texas – April 25, 2011 – Freescale Semiconductor today introduced two LDMOS RF power transistors that allow wireless base station amplifiers to cover all channels in an entire allocated frequency band. The high-efficiency transistors help reduce capital and operating expenditures, and their wide instantaneous bandwidth allows operators to increase network flexibility.
Freescale’s MRF8P20165WH/S for the 1930 to 1995 MHz PCS band and the MRF8P20140WH/S for the 1880 to 2025 MHz TD-SCDMA bands F & A, can support the corresponding wireless spectrum with one amplifier. This significantly reduces the number of power amplifiers needed for a multi-band base station and enables network operators to consolidate devices and equipment, resulting in lower operating expenditures.
In addition, the wide instantaneous bandwidth of Freescale’s new LDMOS devices increases network flexibility for network operators by allowing network equipment sharing between operators and by simplifying upgrades. Operators can add/exchange spectrum holdings within a frequency band without upgrading equipment, and because wideband/multi-band PAs are generally agnostic to modulation formats, operators can upgrade to 4G LTE and other wireless standards with a simple software change and no additional hardware. This means network operators save on both capital and operating costs. Operators also can reconfigure channels on the fly and apply channel consolidation to support increased data rates.
“The need for RF power transistors to deliver exceptional linearity and efficiency over a full wireless band is no longer simply desirable; it is essential,” said Ritu Favre, vice president and general manager of Freescale’s RF Division. “The devices we are introducing today are the first in a family of broadband RF power transistors that includes all current and emerging wireless bands. Each device will be designed to combine all of the attributes – high efficiency and linearity and high output power– required to allow carriers to meet the challenges of the future.”
Freescale’s MRF8P20165WH/S and MRF8P20140WH/S meet linearity requirements for PCS and TD-SCDMA standards while delivering efficiency of at least 43.7 percent when amplifying multiple wireless carriers separated by up to 65 MHz (PCS) and 140 MHz (TD-SCDMA). Both devices are dual-path designs, and can implement the final stage of a Doherty amplifier with one path as the main amplifier and the other as the peaking amplifier.
Key specifications of the new RF power LDMOS devices:
MRF8P20165WH/S (1930 to 1995 MHz)
MRF8P20140WH/S (1880 to 2025 MHz)
Pricing and availability
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