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Freescale to showcase expanded RF portfolio for commercial aerospace applications

Industry’s first 1kW LDMOS field effect transistor operating at L-band frequency to be featured at IMS 2009 in Boston

AUSTIN, Texas – June 2, 2009 – Freescale Semiconductor has introduced five laterally diffused metal oxide semiconductor (LDMOS) field effect transistors (FETs) for commercial aerospace applications. The expanded RF portfolio includes L-band (965 MHz to 1215 MHz) devices and the first LDMOS FETs for aerospace applications at S-band (3.1 GHz to 3.5 GHz). Freescale will showcase these devices at Booth #2018 at the International Microwave Symposium (IMS 2009) in Boston, June 7-12.

The RF power transistors are designed to deliver the highest RF output power, efficiency and gain in their class. The exceptionally rugged devices are ideal for pulsed-signal applications, such as air traffic control, distance measuring equipment (DME) and weather radar.

Freescale’s expanded RF portfolio for aerospace applications includes:

  • MRF6VP121KH/HS – 965 MHz to 1215 MHz, 1kW peak, (100 W average output), 128 µsec pulse width, 10% duty cycle, 50 Vdc, 20 dB gain, 56% efficiency at 1030 MHz.

 

  • MRF6V12500H/HS – 965 MHz to 1215 MHz, 500 W peak, (50 W average output), 128 µsec pulse width, 10% duty cycle, 50 Vdc, 19 dB gain, 60% efficiency at 1030 MHz. Designed to handle full rated peak power into 10:1 VSWR.
  • MRF6V12250H/HS – 965 MHz to 1215 MHz, 275 W peak, (27.5 W average output), 128 µsec pulse width, 10% duty cycle, 50 Vdc, 20.3 dB gain, 65.5% efficiency at 1030 MHz. Designed to handle full rated peak power into 10:1 VSWR.

 

  • MRF7S35120HS – 3.1 GHz to 3.5 GHz, 120 W peak, (24 W average output), 100 µsec pulse width, 20% duty cycle, 32 Vdc, 12 dB gain and 40% efficiency at 3.5 GHz. Designed to handle full rated peak power into 10:1 VSWR.
  • MRF7S35015H – 3.1 GHz to 3.5 GHz, 15 W peak, (3 W average output), 100 µsec pulse width, 20% duty cycle, 32 Vdc, 16 dB gain and 41% efficiency at 3.5 GHz. Designed to handle full rated peak power into 10:1 VSWR.

 

Like other Freescale commercial aerospace RF power transistors, the latest devices are RoHS compliant and incorporate electrostatic discharge (ESD) protection. This ESD circuitry enables a broad gate voltage swing of -6 V to +10 V to help improve performance when the devices are operating in higher efficiency modes, such as Class C.

Pricing and availability
The MRF6VP121KH/HS, MRF6V12250H/HS, MRF7S35120HS and the MRF7S35015H devices are in full production. The MRF6V12500H/HS is expected to be in production in September 2009. All devices are sampling, and reference test fixtures are available now. Large-signal models for L-band devices are expected in September 2009. For sampling and pricing information, please contact a Freescale sales representative or an authorized distributor.

Visit Freescale’s booth #2018 at IMS MTT-S. For up-to-the-minute show updates, follow RFLeonard on Twitter: www.twitter.com/RFLeonard.

For more information about Freescale’s RF power transistor portfolio, visit www.freescale.com/rfpower or www.freescale.com/rfaerospace.

About Freescale Semiconductor
Freescale Semiconductor is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial and networking markets. The privately held company is based in Austin, Texas, and has design, research and development, manufacturing or sales operations around the world. www.freescale.com.

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Media Contacts:

Americas
Dale Weisman
Freescale Semiconductor
(512) 895-2795
dale.weisman@freescale.com

Travis Williams
Lois Paul & Partners
(512) 638-5315
travis_williams@lpp.com

Asia-Pacific                                                 
Gloria Shiu                                                    
Freescale Semiconductor
(85-22) 666-8237                                        
gloria.shiu@freescale.com

Laurent Massicot
Freescale Semiconductor
(33-16) 935-7712
laurent.massicot@freescale.com

India
Anjali Srivastava
Freescale Semiconductor
(91-120) 395-0000
anjali.srivastava@freescale.com

Japan
Masako Tanikawa
Freescale Semiconductor
(81-3) 5437-9128
masako.tanikawa@freescale.com

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